Integrated circuits with programmable memory and methods for producing the same

A method of producing an integrated circuit comprising:

• forming a first shallow trench isolation and a second shallow trench isolation within a substrate;
• forming a base well in the substrate, wherein the base well is positioned between the first shallow trench isolation and the second shallow trench isolation;
• forming a gate dielectric overlying the base well;
• forming a floating gate overlying the gate dielectric, wherein the floating gate has a side surface with an exposed surface area, and wherein a portion of the side surface is covered by the first shallow trench isolation;
• and
• increasing the exposed surface area of the side surface after forming the floating gate.

An integrated circuit comprising:

• a substrate comprising a substrate bottom surface;
• a first shallow trench isolation and a second shallow trench isolation within the substrate, wherein the first shallow trench isolation comprises a first top surface at a reduced shallow trench height measured from the substrate bottom surface;
• a base well within the substrate between the first shallow trench isolation and the second shallow trench isolation;
• a gate dielectric overlying the base well;
• and
• a floating gate overlying the gate dielectric, wherein the floating gate comprises a floating gate lowest point having a floating gate bottom height measured from the substrate bottom surface, and wherein the reduced shallow trench height is greater than the floating gate bottom height by from about 10 angstroms to about 200 angstroms.