Methods Of Forming An Elevationally Extending Conductor Laterally Between A Pair Of Conductive Lines

A method comprising:

• forming a conductive line over a semiconductor substrate such that the conductive line extends in a first direction crossing a second direction, the first conductive line including a first side surface extending vertically with respect to the semiconductor substrate, and the semiconductor substrate including a first diffusion region;
• forming a sacrificial layer over the conductive line and the semiconductor substrate;
• selectively removing the sacrificial layer to leave first sacrificial material over a first part of the first side surface of the conductive line and to expose a portion of the first diffusion region;
• forming conductor material such that the conductor material continuously extends in the second direction to pass across the conductive line and to form a conductive portion that is in electrical contact with the portion of the first diffusion region, the conductive portion being isolated from the first part of the first side surface of the conductive line by the first sacrificial material;
• and
• removing the first sacrificial material while keeping the conductor material continuously extending in the second direction to form a first void space between the conductive portion of the conductor material and the first part of the first side surface of the first conductive line.