Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device, comprising:

• forming a plurality of fins in a first and a second region defined on a semiconductor substrate,
• wherein the plurality of fins includes a first group of fins arranged in the first region and second group of fins arranged in the second region;
• forming a dielectric layer over the first region and the second region;
• forming a first conductive material layer having a first thickness over the first region and the second region;
• removing the first conductive material layer over a portion of the first region;
• forming a second conductive material layer having a second thickness over the first region and the second region;
• forming a first metal gate electrode fill material over the first region and the second region;
• removing the first metal gate electrode fill material over the second region;
• removing the first conductive material layer over the second region and the second conductive material layer over the second region;
• forming a third conductive material layer over the first region and the second region;
• removing the third conductive material layer over a portion of the second region;
• forming a fourth conductive material layer over the first region and the second region;
• and
• forming a second metal gate electrode fill material over the second region.

A semiconductor device comprising a plurality of fins in a first and a second region defined on a semiconductor substrate,

• wherein the plurality of fins includes a first group of fins arranged in the first region and a second group of fins arranged in the second region;
• a dielectric layer overlying the first region and the second region;
• a first conductive material layer overlying a first portion of the first region;
• a second conductive material layer overlying the first portion of the first region and a second portion of the first region;
• a third conductive material layer overlying a first portion of the second region;
• a fourth conductive material layer overlying the first portion of the second region and a second portion of the second region;
• a first metal gate fill material overlying the second conductive material layer;
• and
• a second metal gate fill material overlying the fourth conductive material layer,
• wherein the first metal gate fill material and the second metal gate fill material are separated from each other by the third conductive material layer and the fourth conductive material layer and there is no conductive material layer between the first metal gate fill material and the second metal gate fill material that overlies both the first region and the second region.

A method for manufacturing a semiconductor device including a first field effect transistor (FET) and a second FET, the method comprising:

• forming a first fin for the first FET and a second fin for the second FET over a substrate;
• forming a gate dielectric layer over the first fin and the second fin;
• forming a work function adjustment layer comprising a first work function adjustment layer and a second work function adjustment layer over the gate dielectric layer over the first and second fins;
• covering the work function adjustment layer covering the second fin with a mask;
• forming a first conductive material layer over the work function adjustment layer over the first fin;
• covering the first fin having the first conductive material layer with a first gate fill metal;
• removing the mask;
• and
• after the removing the mask, forming a second conductive material layer over the second work function adjustment layer over the second fin.

A semiconductor device comprising:

• a first field effect transistor (FET) including a first fin and a second FET including a second fin formed on a semiconductor substrate;
• a gate dielectric layer covering the first and second fins;
• a work function adjustment layer covering the gate dielectric layer covering the first and second fins;
• a first conductive material layer covering the work function adjustment layer covering the first fin;
• a second conductive material layer covering the work function adjustment layer covering the second fin;
• a first metal gate fill material covering the first conductive material layer covering the first fin;
• and
• a second metal gate fill material covering the second conductive material layer covering the second fin,
• wherein the first metal gate fill material and the second metal gate fill material are separated from each other by the first conductive material layer and the second conductive material layer and there is no other conductive material layer between the first conductive material layer and the second conductive material layer, and
• a portion of the second conductive layer is formed immediately adjacent a portion of the first conductive layer.