Method of manufacturing semiconductor device and semiconductor device

Abstract

A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor layer including a wide bandgap semiconductor, the semiconductor layer having an element region and an outer peripheral region surrounding an outer periphery of the element region when viewed two-dimensionally, forming a step portion surrounding the outer periphery of the element region in the outer peripheral region, and forming a metal layer along the step portion. The step portion has a sidewall recessed downward from a main surface of the element region in a cross section parallel to a thickness direction of the semiconductor layer, and the metal layer extends to cover at least a portion of the sidewall. The method of manufacturing a semiconductor device further includes the step of dividing the semiconductor layer into the element regions on an outside of the step portion when viewed from the element region.

Dependencies are inferred from the claim text.