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US 2018/0019214 A1Published application
Wafer rigidity with reinforcement structure
AssigneeGlobalfoundries Inc.
InventorsRonald G. FILIPPI, Erdem KALTALIOGLU, Andrew T. KIM, Ping-Chuan WANG
Life of this patent
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Abstract
Reinforcement structures used with a thinned wafer and methods of manufacture are provided. The method includes forming trenches or vias at least partially through a backside of a thinned wafer attached to a carrier wafer. The method further includes depositing material within the trenches or vias to form reinforcement structures on the backside of the thinned wafer. The method further includes removing excess material from a surface of the thinned wafer, which was deposited during the depositing of the material within the vias.
Claims19
A method comprising:
- forming trenches or vias at least partially through a backside of a thinned wafer attached to a carrier wafer;
- depositing material within the trenches or vias to form reinforcement structures on the backside of the thinned wafer;
- removing excess material from a surface of the thinned wafer, which was deposited during the depositing of the material within the trenches or vias.
A method comprising:
- etching vias partially through a backside of a thinned wafer;
- etching thru-silicon-vias extending through the backside of the thinned wafer;
- simultaneously depositing material within the thru-silicon-vias and the trenches or vias, the material deposited within the trenches or vias forming reinforcement structures on the backside of the thinned wafer;
- and
- removing excess material from a surface of the thinned wafer, which was deposited during the depositing of the material within the trenches or vias and the thru-silicon-vias.
2 more elements
Dependencies are inferred from the claim text.