Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsMing-Te Wei, Chun-Hsien Lin
Life of this patent
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Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a first dielectric layer is formed on the substrate, in which a first conductor is embedded within the first dielectric layer. Next, a second dielectric layer is formed on the first dielectric layer, part of the second dielectric layer is removed to form a contact hole, and a lateral etching process is conducted to expand the contact hole to form a funnel-shaped opening. Next, a metal layer is formed in the funnel-shaped opening, and the metal layer is planarized to form a second conductor.
Claims18
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a first dielectric layer on the substrate;
- forming a via hole in the first dielectric layer;
- and
- performing a lateral etching process to expand the via hole for forming a funnel-shaped opening.
A semiconductor device, comprising:
- a substrate;
- a first dielectric layer on the substrate;
- a first conductor in the first dielectric layer, wherein the first conductor is funnel-shaped and the first conductor comprises:
- a first portion comprising a first sidewall;
- and
- a second portion embedded in the first dielectric layer, wherein the second portion comprises a second sidewall and a third sidewall, each of the second sidewall and the third sidewall is planar, and the slope of each of the second sidewall and the third sidewall is less than 90 degrees.
(canceled)
16-18. (canceled)
Dependencies are inferred from the claim text.