Semiconductor Devices and Methods for Forming a Semiconductor Device

A semiconductor device comprising a crack propagation prevention structure located at an edge region of a wiring layer stack located on a semiconductor substrate of the semiconductor device, wherein the crack propagation prevention structure laterally surrounds at least one wiring structure located within the wiring layer stack, wherein the crack propagation prevention structure is an electrically conductive structure configured to float during operating the semiconductor device, wherein the crack propagation prevention structure extends vertically at least from a surface of the wiring layer stack to a vertical distance from the semiconductor substrate equal to or less than a thickness of a gate oxide of a transistor structure of the semiconductor device.

A method for forming a semiconductor device, the method comprising:

• forming an insulation trench extending from a surface of a semiconductor substrate of the semiconductor device into the semiconductor substrate, wherein the insulation trench comprises at least an insulation layer insulating a conductive trench structure from the semiconductor substrate, and
• forming a crack propagation prevention structure located at an edge region of a wiring layer stack, wherein the wiring layer stack is located on the front side surface of the semiconductor substrate, wherein the crack propagation prevention structure is formed to laterally surround at least one wiring structure located within the wiring layer stack, wherein the crack propagation prevention structure is formed to extend vertically at least from the surface of the wiring layer stack to the insulation trench, and wherein the insulation layer of the insulation trench electrically insulates the crack propagation prevention structure from the semiconductor substrate while connecting to the conductive trench structure.