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US 2018/0019199 A1Published application
Semiconductor device having redistribution layer with copper migration stopping
AssigneeChengdu Monolithic Power Systems Co., Ltd.
InventorsMing Xiao, Zeqiang Yao, Heng Li, Fayou Yin
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Abstract
A semiconductor device having a first dielectric layer and a redistribution layer. The redistribution layer has sidewalls and is formed on a passivation layer of the semiconductor device. The first dielectric layer covers the sidewalls of the redistribution layer. The first dielectric layer is insulative and has a physical property of stopping the migration of the redistribution layer.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having an integrated circuit and a metal layer, wherein the metal layer is coupled to the integrated circuit;
- a passivation layer on the semiconductor substrate;
- a plurality of vias formed in the passivation layer to expose a plurality of surfaces of the metal layer;
- a redistribution layer formed on a part of the passivation layer and in the plurality of vias, wherein the redistribution layer is coupled to the metal layer and has sidewalls and a top surface;
- and
- a first dielectric layer covering the sidewalls of the redistribution layer, wherein the first dielectric layer is insulative and is configured to stop the migration of the redistribution layer.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate having an integrated circuit and a metal layer, wherein the metal layer is coupled to the integrated circuit;
- a passivation layer on the semiconductor substrate;
- a first connection structure and a second connection structure, wherein each of the connection structures comprises:
- a plurality of vias formed in the passivation layer to expose a plurality of surfaces of the metal layer;
- and
- a redistribution layer formed on a part of the passivation layer and in the plurality of vias, wherein the redistribution layer is coupled to the metal layer and has sidewalls and a top surface;
- and
- a first dielectric layer covering the sidewalls of the redistribution layerof each connection structure, wherein the first dielectric layer is insulative and is configured to stop the migration of the redistribution layer.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a passivation layer on a semiconductor substrate having a metal layer;
- forming a plurality of vias in the passivation layer to expose a plurality of surfaces of the metal layer;
- forming a redistribution layer on a part of the passivation layer and in the plurality of vias so that the redistribution layer is coupled to the metal layer, wherein the redistribution layer has sidewalls and a top surface;
- and
- forming a first dielectric layer on the sidewalls and the top surface of the redistribution layer and on the remaining part of the passivation layer, wherein the first dielectric layer is insulative and is configured to stop the migration of the redistribution layer.
2 more elements
Dependencies are inferred from the claim text.