Semiconductor module and power converter

A semiconductor module comprising:

• an insulating substrate including an insulating layer, a first metal pattern formed on an upper surface of the insulating layer, and a second metal pattern formed on a lower surface of the insulating layer;
• a semiconductor chip that is formed of SiC and is fixed to the first metal pattern with a first metal joining member;
• and
• a heat sink that is fixed to the second metal pattern with a second metal joining member, wherein
• the semiconductor chip has a thickness that is equal to or larger than 0.25 mm and equal to or smaller than 0.35 mm,
• the insulating layer has a thickness that is equal to or larger than 0.8 mm, and
• no terminals are directly connected to the insulating substrate.

A power converter comprising at least one semiconductor module including:

• an insulating substrate including an insulating layer, a first metal pattern formed on an upper surface of the insulating layer, and a second metal pattern formed on a lower surface of the insulating layer;
• a semiconductor chip that is formed of SiC and is fixed to the first metal pattern with a first metal joining member;
• and
• a heat sink that is fixed to the second metal pattern with a second metal joining member, wherein
• the semiconductor chip has a thickness that is equal to or larger than 0.25 mm and equal to or smaller than 0.35 mm,
• the insulating layer has a thickness that is larger than the thickness of the semiconductor chip by a factor of 2.66 inclusive to 5 inclusive, and
• no terminals are directly connected to the insulating substrate.

A power converter comprising at least one semiconductor module including:

• an insulating substrate including an insulating layer, a first metal pattern formed on an upper surface of the insulating layer, and a second metal pattern formed on a lower surface of the insulating layer;
• a semiconductor chip that is formed of SiC and is fixed to the first metal pattern with a first metal joining member;
• and
• a heat sink that is fixed to the second metal pattern with a second metal joining member, wherein
• the semiconductor chip has a thickness that is equal to or larger than 0.25 mm and equal to or smaller than 0.35 mm,
• the insulating layer has a thickness that is equal to or larger than 0.8 mm, and
• no terminals are directly connected to the insulating substrate.