Backing substrate stabilizing donor substrate for implant or reclamation

Abstract

A donor substrate in a layer transfer process, is stabilized by attaching a backing substrate. The backing substrate allows thermal and mechanical stabilization during high-power implant processes. Upon cleaving the donor substrate to release a thin layer of material to a target, the backing substrate prevents uncontrolled release of internal stress leading to buckling/fracture of the donor substrate. The internal stress may accumulate in the donor substrate due to processes such as cleave region formation, bonding to the target, and/or the cleaving process itself, with uncontrolled bow and warp potentially precluding reclamation/reuse of the donor substrate in subsequent layer transfer processes. In certain embodiments the backing substrate may exhibit a Coefficient of Thermal Expansion (CTE) substantially matching, or complementary to, that of the donor substrate. In some embodiments the backing structure may include a feature such as a lip.

Dependencies are inferred from the claim text.