CVD Mo DEPOSITION BY USING MoOCl4
AssigneeEntegris, Inc.
InventorsThomas H. Baum, Philip S.H. Chen, Robert Wright, Bryan Hendrix, Shuang Meng, Richard Assion
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Abstract
A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
Claims20
A method of forming a molybdenum-containing material on a substrate, comprising contacting the substrate with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate.
A method of forming a molybdenum-containing material on a semiconductor device substrate comprising silicon dioxide having a titanium nitride layer thereon, the method comprising:
- forming a nucleation surface on the titanium nitride layer by contacting the titanium nitride layer with diborane vapor, contacting the nucleation surface with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate, wherein the vapor conditions are selected such that the deposited molybdenum-containing material has a resistivity of at most 20 μΩ·cm.
A method of forming a molybdenum-containing material on a substrate, comprising contacting the substrate with diborane under contacting conditions establishing nucleation surface on the substrate, and depositing molybdenum on the nucleation surface by a chemical vapor deposition process utilizing molybdenum oxytetrachloride (MoOCl4) precursor in the presence of hydrogen, to produce the molybdenum-containing material on the substrate.
Dependencies are inferred from the claim text.