Semiconductor device and manufacturing method therefor, and electronic device

Abstract

A manufacturing method for a semiconductor device, comprising: providing a semiconductor substrate (100), and forming a shallow trench isolation structure (104) in the semiconductor substrate (100); forming a gate structure comprising a gate oxidation layer (105a) and a gate material layer (105b) that are stacked from the bottom up on the semiconductor substrate (100); executing first ion implantation so as to form first doping ions in the gate material layer (105b), and executing second ion implantation (109) so as to form second doping ions at the part of the gate material layer (105b) that is located over a top corner of the shallow trench isolation structure(104), the second doping ions and the first doping ions being opposite in conduction type.

Dependencies are inferred from the claim text.