Wafer scale packaging
AssigneeAkoustis, Inc.
InventorJeffrey B. SHEALY
Life of this patent
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Abstract
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.
Claims20
1-19. (canceled)
A method of wafer scale packaging Group III-Nitride containing devices, the method comprising:
- providing a substrate member having a surface region;
- forming a thickness of Group III-Nitride material overlying the surface region;
- forming an insulating material overlying a portion of the thickness of Group III-Nitride material;
- forming a contact region to expose a portion of the thickness of the Group III-Nitride material;
- and
- forming a pillar structure comprising a copper material within the contact region.
A wafer scale package apparatus, the apparatus comprising:
- a mounting substrate member, the mounting substrate member being optically transparent, the mounting substrate member comprising a surface region;
- a single crystal acoustic resonator device configured overlying the surface region, the single crystal acoustic resonator device comprising a resonator structure and a contact structure;
- a patterned solder structure overlying the surface region and configured between the single crystal acoustic resonator device and the surface region;
- and
- a first air gap region provided from the patterned solder structure and configured between the resonator structure and a first portion of the mounting substrate member, wherein the first air gap region has a height of 10 um to 50 um.
A method for packaging a resonator device, the method using a wafer scale packaging process, the method comprising:
- providing a single crystal acoustic resonator device formed on a silicon substrate having a first thickness, the single crystal acoustic resonator device comprising a resonator structure and a contact structure;
- forming a patterned solder structure configured overlying the single crystal acoustic resonator device and the surface region to form a first air gap region provided from the patterned solder structure and configured between the resonator structure and a first portion of a mounting substrate member, wherein the first air gap region having a height of 10 um to 50 um, the patterned solder structure having a patterned upper surface region;
- forming a thickness of an epoxy material overlying the patterned upper surface region, while maintaining the resonator structure free from any of the epoxy material;
- positioning the mounting substrate member to the epoxy material;
- curing the epoxy material to mate the single crystal acoustic resonator device to the mounting substrate member, the mounting substrate member being optically transparent, the mounting substrate member comprising a surface region;
- and
- processing the silicon substrate to remove a portion of the silicon substrate to form a resulting silicon substrate of a second thickness, the second thickness being less than the first thickness, the resulting silicon substrate having a silicon backside region.
Dependencies are inferred from the claim text.