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US 2018/0019157 A1Published application
Methods Of Forming One Or More Covered Voids In A Semiconductor Substrate
AssigneeMicron Technology, Inc.
InventorDavid H. Wells
Life of this patent
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Abstract
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Claims6
1-32. (canceled)
A method of forming a covered void in a semiconductor substrate, comprising:
- forming a pair of projections projecting upwardly from a semiconductor substrate, the projections comprising sidewalls;
- providing elemental-form silicon atop the pair of projections;
- and
- selectively growing relative to at least portions of the projection sidewalls a polysilicon-comprising material from the elemental-form silicon effective to bridge across the pair of projections to form a covered void between the pair of projections.
1 more element
37-262. (canceled)
Dependencies are inferred from the claim text.