Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same

A method of forming a thin film, comprising:

• forming an aluminum-containing film on a substrate by using an aluminum compound represented by General Formula (I):
• wherein:
• R1 and R3 are each independently a C4 to C10 branched alkyl, alkenyl, or alkynyl group, or a C4 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group;
• and
• R2, R4, and R5 are each independently a C1 to C10 linear or branched alkyl, alkenyl, or alkynyl group, or a C6 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group.

A method of fabricating an integrated circuit device, comprising:

• forming a lower structure on a substrate;
• and
• forming an aluminum-containing film on the lower structure at a temperature of about 300° C. to about 600° C. by using an aluminum compound represented by General Formula (I):
• wherein:
• R1 and R3 are each independently a C4 to C10 branched alkyl, alkenyl, or alkynyl group, or a C4 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group;
• and
• R2, R4, and R5 are each independently a C1 to C10 linear or branched alkyl, alkenyl, or alkynyl group, or a C6 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group.