Non-volatile memory device and method of fabricating the same
AssigneesSK hynix Inc., Sogang University Research Foundation
InventorWoo Young CHOI
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Abstract
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory includes a channel layer, a data storage layer disposed on the channel layer, a plurality of control gates arranged on the data storage layer and spaced apart from one another, and conductive cover layers disposed on sidewalls of the control gates facing each other. The plurality of control gates includes a first conductor having a first work function. The conductive cover layers include a second conductor having a second work function that is greater than the first work function.
Claims20
A non-volatile memory device comprising:
- a channel layer;
- a data storage layer disposed on the channel layer;
- a plurality of control gates arranged on the data storage layer and spaced apart from one another, the plurality of control gates comprising a first conductor having a first work function;
- and
- conductive cover layers disposed on sidewalls of control gates facing each other, the conductive cover layers comprising a second conductor having a second work function that is greater than the first work function.
A method of fabricating a non-volatile memory device, the method comprising:
- forming a stacked structure by alternately and repeatedly forming one or more insulation layers and one or more conductive layers on a substrate;
- forming via holes extending in a vertical direction that is normal to a main surface of the substrate by patterning the stacked structure;
- forming a data storage layer on a sidewall of each of the via holes;
- and
- forming a semiconductor pillar comprising a channel layer in a groove area defined by the data storage layer in each of the via holes,
- wherein forming the one or more conductive layers comprises:
- forming a first conductive layer having a first work function;
- and
- forming a second conductive layer having a second work function that is greater than the first work function,
- wherein the second conductive layer is formed on at least one of a top surface and a bottom surface of the first conductive layer in the vertical direction.
Dependencies are inferred from the claim text.