Method of manufacturing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng CHANG, Po-Chi WU, Chih-Han LIN, Horng-Huei TSENG
Life of this patent
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Abstract
A semiconductor structure includes a substrate, at least one active semiconductor fin, at least one insulating structure, a gate electrode, and a gate dielectric. The active semiconductor fin is disposed on the substrate. The insulating structure is disposed on the substrate and adjacent to the active semiconductor fin. A top surface of the insulating structure is non-concave and is lower than a top surface of the active semiconductor fin. The gate electrode is disposed over the active semiconductor fin. The gate dielectric is disposed between the gate electrode and the active semiconductor fin.
Claims20
A method for manufacturing a semiconductor structure comprising:
- forming at least one first active semiconductor fin and at least one second active semiconductor fin on a substrate, wherein the substrate has a first region and a second region, the first active semiconductor fin is formed on the first region of the substrate, and the second active semiconductor fin is formed on the second region of the substrate;
- forming a dielectric layer on the first region and the second region of the substrate;
- doping a first portion of the dielectric layer on the first region of the substrate with first dopants to form a first insulating structure;
- doping a second portion of the dielectric layer on the second region of the substrate with second dopants to form a second insulating structure, wherein the second dopants are different from the first dopants;
- converting a portion of the first insulating structure and a portion of the second insulating structure into at least one sacrificial layer;
- and
- removing the at least one sacrificial layer.
A method for manufacturing a semiconductor structure comprising:
- forming at least one first active semiconductor fin and at least one second active semiconductor fin;
- forming a dielectric material comprising a first portion around the at least one first active semiconductor fin and a second portion around the at least one second active semiconductor fin;
- doping the first portion of the dielectric material with first dopants;
- doping the second portion of the dielectric material with second dopants, wherein the first dopants are different from the second dopants;
- and
- recessing the doped first and second portions of the dielectric material, such that the recessed first and second portions of the dielectric material have different thicknesses.
A method for manufacturing a semiconductor structure comprising:
- forming an active semiconductor fin;
- forming a dielectric material around the active semiconductor fin;
- forming a protection layer over the active semiconductor fin and the dielectric material;
- doping the dielectric material with dopants after forming the protection layer;
- removing the protection layer after doping the dielectric material;
- and
- recessing the doped dielectric material after removing the protection layer.
Dependencies are inferred from the claim text.