Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJi-won YU, Hyun-suk LEE, Ji-woon PARK, Gi-hee CHO, Hee-sook PARK, Woong-hee SOHN
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- supplying a first reactant to inside a processing chamber into which a substrate has been introduced;
- controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period;
- supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant;
- and
- supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate inside a processing chamber;
- supplying a precursor gas to the inside of the processing chamber to form a precursor layer on the substrate
- controlling a flow of a purge gas via a mass flow controller (MFC) and an auxiliary MFC that have different opening/closing times of respective fluid openers/closers;
- supplying the purge gas, of which flow has been controlled, to the inside of processing chamber;
- and
- supplying a reaction gas to the inside of the processing chamber to form a thin film on the substrate by reacting the precursor layer and the reaction gas.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate inside a processing chamber such that the substrate includes a via hole or trench structure therein;
- and
- controlling a supply of a first reactant gas, a purge gas, and a second reactant gas to the processing chamber,
- wherein the controlling the supply of the purge gas comprises controlling a flow of the purge gas via a mass flow controller (MFC) and an auxiliary MFC that have different opening/closing times of respective fluid openers/closers.
Dependencies are inferred from the claim text.