Metal-metal direct bonding method
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsPaul GONDCHARTON, Bruno IMBERT, Hubert MORICEAU
Life of this patent
Estimating the term…
Loading patent…
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsPaul GONDCHARTON, Bruno IMBERT, Hubert MORICEAU
Estimating the term…
A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile stress (σi) between 30% and 100% of the tensile yield strength (σe) of the metal; assembling the first and second substrates at a bonding interface by directly contacting the first and second tensile stressed metal layers; and subjecting the assembly of the first and second substrates to a stabilization annealing at a temperature lower than or equal to a temperature threshold beyond which the first and second tensile stressed metal layers are plastically compressively deformed.
A method for assembling a first substrate and a second substrate by a metal-metal direct bonding, comprising:
Dependencies are inferred from the claim text.