Method and material for cmos contact and barrier layer
OwnerXinyu BAO, Chun YAN +3inventors
InventorsXinyu BAO, Chun YAN, Zhiyuan YE, Errol Antonio C. SANCHEZ, David K. CARLSON
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Abstract
The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed silicon antimony layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to a gas mixture comprising a silicon-containing precursor and an antimony-containing precursor to form a silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater on the surface.
Claims20
A method of forming a tensile-stressed silicon antimony layer, comprising:
- heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon;
- and
- exposing a surface of the substrate to a gas mixture comprising a silicon-containing precursor and an antimony-containing precursor to form a silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater on the surface.
A method of processing a substrate, comprising:
- positioning a semiconductor substrate in a processing chamber, wherein the substrate comprises a source/drain region;
- exposing the substrate to a silicon-containing precursor and an antimony-containing precursor to form a silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater on the source/drain region, wherein the silicon antimony alloy has a carbon concentration of about 1×1017 atoms per cubic centimeter or greater;
- and
- forming a transistor channel region on the silicon antimony alloy.
A structure, comprising:
- a substrate comprising a source region and a drain region, and a transistor channel region adjacent the source region and the drain region;
- and
- a silicon antimony alloy disposed between the transistor channel region and the source region and the drain region, the silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater and a carbon concentration of about 1×1017 atoms per cubic centimeter or greater.
Dependencies are inferred from the claim text.