Production of a semiconductor support based on group iii nitrides

Method for producing a support for production of a semiconductor structure based on group III nitrides, the method comprising the steps of:

• formation of a buffer layer on a substrate, said buffer layer comprising an upper layer based on group III nitrides,
• deposition of a crystalline layer on the buffer layer, said crystalline layer being deposited from silicon atoms so as to cover the entire surface of the upper layer based on group III nitrides, said crystalline layer having a triple periodicity of silicon atoms in a crystallographic direction [1-100] such that a diffraction image of said crystalline layer obtained by grazing-incidence diffraction of electrons in the direction [1-100] comprises:
• a central line (0, 0) and integer order lines (0, −1) and (0, 1),
• two fractional order diffraction lines (0, −1/3) and (0, −2/3) between the central line (0, 0) and the integer order line (0, −1), and
• two fractional order diffraction lines (0, 1/3) and (0, 2/3) between the central line (0, 0) and the integer order line (0, 1).