High growth rate deposition for group iii/v materials

A method for forming a semiconductor material on a wafer, comprising:

• heating a wafer to a deposition temperature in a range between 550° C. and 900° C. within a processing system;
• exposing the wafer to a deposition gas comprising a gallium precursor gas, an aluminum precursor gas, and arsine at a total pressure in a range between 20 Torr and 1000 Torr;
• and
• depositing one or more layers on the wafer at a deposition rate selected from the group consisting of 30 μm/hr, 40 μm/hr, 50 μm/hr, 55 μm/hr, 60 μm/hr, 70 μm/hr, 80 μm/hr, and 90-120 μm/hr deposition rates,
• wherein the one or more layers include aluminum gallium arsenide, and multiple layers, including the one or more layers, form a gallium arsenide cell.

A method for forming a semiconductor material on a wafer, comprising:

• heating a wafer to a deposition temperature in a range between 550° C. and 900° C. within a processing system;
• exposing the wafer to a deposition gas comprising a gallium precursor gas, an indium precursor gas, a nitrogen precursor gas and arsine at a total pressure in a range between 20 Torr and 1000 Torr;
• and
• depositing one or more layers on the wafer at a deposition rate selected from the group consisting of 30 μm/hr, 40 μm/hr, 50 μm/hr, 55 μm/hr, 60 μm/hr, 70 μm/hr, 80 μm/hr, and 90-120 μm/hr deposition rates,
• wherein the one or more layers comprise gallium, arsenic, nitrogen and indium, and multiple layers, including the one or more layers, form a gallium arsenide cell.

A method of forming a cell, comprising:

• heating a substrate comprising gallium and arsenic to a temperature in a range between 550° C. and 900° C. within a processing system;
• exposing the substrate to a deposition gas comprising a gallium precursor gas and arsine;
• depositing an n-type contact layer comprising gallium and arsenic over the substrate, the n-type contact layer having a thickness of 100 nm or less;
• depositing an n-type passivation layer comprising gallium, aluminum, and arsenic over the substrate, the n-type passivation layer having a thickness of 100 nm or less;
• depositing an n-type absorber layer comprising gallium and arsenic over the substrate, the n-type emitter layer having a thickness of 3000 nm or less;
• depositing a p-type passivation layer comprising gallium, aluminum, and arsenic over the substrate, the p-type passivation layer having a thickness of 300 nm or less;
• and
• depositing a p-type contact layer comprising gallium and arsenic over the substrate, the p-type contact layer having a thickness of 100 nm or less,
• wherein each of the n-type contact layer, the n-type passivation layer, the n-type absorber layer, the p-type passivation layer, and the p-type contact layer is deposited at deposition rate selected from the group consisting of 30 μm/hr, 40 μm/hr, 50 μm/hr, 55 μm/hr, 60 μm/hr, 70 μm/hr, 80 μm/hr, and 90-120 μm/hr deposition rates.