Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ald
AssigneeApplied Materials, Inc.
InventorsJessica S. KACHIAN, Naomi YOSHIDA, Mei CHANG, Mary EDMONDS, Andrew C. KUMMEL, Sang Wook PARK, Hyunwoong KIM
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Abstract
Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.
Claims20
A substrate processing method, comprising:
- heating a substrate in a reaction chamber to a temperature of less than 500° C.;
- exposing the substrate to a chlorosilane precursor utilizing a chemical vapor deposition process;
- and
- exposing the substrate to an anhydrous HOOH precursor utilizing the chemical vapor deposition process, wherein a chlorine terminated saturated silicon bilayer is deposited on the substrate.
A substrate processing method, comprising:
- heating a III-V material substrate in a reaction chamber to a temperature of less than 500° C.;
- exposing the substrate to an Si2Cl6 precursor utilizing a chemical vapor deposition process;
- exposing the substrate to an anhydrous HOOH precursor utilizing the chemical vapor deposition process;
- and
- exposing the substrate to an Si2Cl6 precursor utilizing an atomic layer deposition process;
- and
- exposing the substrate to an anhydrous HOOH precursor utilizing the atomic layer deposition process, where in the atomic layer deposition process cyclically exposes the substrate to the Si2Cl6 precursor and the anhydrous HOOH precursor in an alternating manner.
A substrate processing method, comprising:
- heating a III-V material substrate in a reaction chamber to a temperature of less than 500° C.;
- dosing the substrate with Si2Cl6;
- dosing the substrate with anhydrous HOOH after the dosing the substrate with Si2Cl6;
- dosing the substrate with Langmuir trimethyl aluminum at 250° C.;
- and
- dosing the substrate with atomic hydrogen at 250° C.
Dependencies are inferred from the claim text.