Back to results
US 2018/0019115 A1Published application
Semiconductor substrate and manufacturing method thereof
AssigneeGlobalWafers Co., Ltd.
InventorsChun-I Fan, Chih-Yuan Chuang, Ying-Ru Shih, Wen-Ching Hsu
Life of this patent
Estimating the term…
Abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.
Claims16
A semiconductor substrate, comprising:
- an epitaxy region, located at a central portion of a main plane of the semiconductor substrate;
- a periphery region, surrounding the epitaxy region;
- and
- an injured region, distributed inside the periphery region.
1 more element
A manufacturing method of a semiconductor substrate, comprising:
- providing a semiconductor substrate;
- and
- forming an injured region inside a periphery region of the semiconductor substrate.
Dependencies are inferred from the claim text.