Magnetic memory device and method for operating the same

A memory system, comprising:

• a magnetic memory device comprising:
• a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series;
• and
• an input node coupled to the first tunnel magnetoresistive element, wherein the input node is configured to receive a voltage signal in a write mode,
• wherein the first tunnel magnetoresistive element initially holds a first resistance value, and wherein the first tunnel magnetoresistive element is short-circuited to hold a second resistance value after the voltage signal is received by the input node, and
• wherein end nodes of the memory circuit are coupled to defined voltages in a read mode, and wherein the magnetic memory device further comprises a read-out circuit configured to measure a voltage at a sensing node in the read mode, wherein the sensing node is interconnected between the first tunnel magnetoresistive element and the second tunnel magnetoresistive element;
• and
• a programming circuit configured to supply the voltage signal to the input node of the magnetic memory device for setting a second memory state which is different from an initial first memory state of the magnetic memory device.

A semiconductor chip comprising:

• a tunnel magnetoresistive structure, wherein a magnetic sensor device is formed in a first portion of the tunnel magnetoresistive structure, and a magnetic memory device is formed in a second portion of the tunnel magnetoresistive structure, the magnetic memory device comprising:
• a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series;
• and
• an input node coupled to the first tunnel magnetoresistive element, wherein the input node is configured to receive a voltage signal in a write mode,
• wherein the first tunnel magnetoresistive element initially holds a first resistance value, and wherein the first tunnel magnetoresistive element is short-circuited to hold a second resistance value after the voltage signal is received by the input node, and
• wherein end nodes of the memory circuit are coupled to defined voltages in a read mode, and wherein the magnetic memory device further comprises a read-out circuit configured to measure a voltage at a sensing node in the read mode, wherein the sensing node is interconnected between the first tunnel magnetoresistive element and the second tunnel magnetoresistive element.