Selectively activated synaptic device with ultrasmall dimension and low power consumption
AssigneeKonkuk University Industrial Cooperation Corp.
InventorsBae Ho PARK, Chansoo YOON
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Abstract
Provided herein are a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor. The capacitor is manufactured by directly depositing a metal electrode having high ion mobility on an ultrathin ferroelectric layer having a certain thickness, and thus may simultaneously use metal cation migration and ferroelectric polarization inversion, and a low-power and high-performance capacitor capable of being selectively activated may be provided by simultaneously controlling an external electric field and an internal electric field caused by polarization of the inside of a ferroelectric thin film.
Claims13
A capacitor comprising:
- a first layer comprising a conductive oxide;
- a second layer disposed on the first layer, having a thickness of about 2 nm to about 10 nm, and comprising a ferroelectric substance;
- and
- a third layer directly disposed on the second layer, having a thickness of about 20 nm to about 200 nm, and comprising an active metal.
A method of manufacturing a capacitor, the method comprising:
- forming a first layer comprising a conductive oxide on a substrate;
- forming, on the first layer, a second layer comprising a ferroelectric substance and having a thickness of about 2 nm to about 10 nm;
- and
- forming, on the second layer, a third layer comprising an active metal and having a thickness of about 20 nm to about 200 nm.
Dependencies are inferred from the claim text.