Semiconductor memory device
AssigneeRenesas Electronics Corporation
InventorsYuichiro ISHII, Atsushi MIYANISHI, Yoshikazu SAITO
Life of this patent
Estimating the term…
Loading patent…
AssigneeRenesas Electronics Corporation
InventorsYuichiro ISHII, Atsushi MIYANISHI, Yoshikazu SAITO
Estimating the term…
The present invention provides a semiconductor memory device that can perform failure detection of an address decoder by a simple method with a low area overhead. The semiconductor memory device includes: a first memory array having a plurality of first memory cells arrange in matrix; a plurality of word lines provided corresponding to each of the memory cell rows; an address decoder for selecting a word line from the word lines based on the input address information; a second memory array that is provided adjacent to the first memory array in the column direction, having a plurality of second memory cells able to read address information used in the selection of the previously stored word line, according to the selection of the word line extended to the second memory array; and a comparison circuit for comparing the input address information with the address information read from the second memory array.
A semiconductor memory device comprising:
Dependencies are inferred from the claim text.