Memory device, memory system including the same and operation method of the memory system
AssigneeSK hynix Inc.
InventorsChang-Wan HA, Sang-Hyun SONG
Life of this patent
Estimating the term…
Abstract
A memory system includes: a first memory device including a first internal voltage generation circuit; and a second memory device including a second internal voltage generation circuit, wherein the first memory device and the second memory device receive an identical chip enable signal, and when the chip enable signal is disabled, the first internal voltage generation circuit a no the second internal voltage generation circuit are controlled in a standby mode, and when the chip enable signal is enabled, the first internal voltage generation circuit and the second internal voltage generation circuit are independently controlled to have one mode between a weak active mode and a strong active mode.
Claims5
1-10. (canceled)
A memory device, comprising:
- an internal voltage generation circuit suitable for generating an internal voltage whose drivability is controllable according to a mode of operation of the memory device;
- and
- a mode control circuit suitable for controlling the internal voltage generation circuit in a mode of operation selected among a standby mode, a weak active mode, and a strong active mode based on a chip enable signal and a logical unit number (LUN) address.
Dependencies are inferred from the claim text.