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US 2018/0012858 A1Published application
Rare earth interlays for mechanically layering dissimilar semiconductor wafers
AssigneeIQE plc
InventorsAndrew Clark, Rytis Dargis, Michael Lebby, Rodney Pelzel
Life of this patent
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Abstract
Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon.
Claims15
A structure comprising:
- a first layer comprising a Group IV semiconductor;
- a second layer comprising at least one rare earth element, wherein a first portion of the second layer is either lattice matched or strain balanced to the first layer;
- a third layer comprising a III-V semiconductor, and wherein the structure contains at least one bonded interface.
Dependencies are inferred from the claim text.