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US 2018/0009077 A1Published application
Chemical mechanical polishing head
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJerry Chen, Chunhung Chen
Life of this patent
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Abstract
To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a support plate having a plurality of apertures. An aperture of the plurality of apertures has a first opening and a second opening connected by a slot. Other systems and methods are also disclosed.
Claims20
A chemical mechanical polishing (CMP) system, comprising:
- a polishing head adapted to retain a wafer, wherein the polishing head includes a support plate having a plurality of apertures, an aperture of the plurality of apertures having a first opening and a second opening connected by a slot.
A polishing head associated with a chemical mechanical polishing (CMP) system, comprising:
- a retaining ring;
- and
- a support plate attached to the retaining ring, wherein the support plate includes a plurality of apertures, an aperture of the plurality of apertures having a first opening associated with a first diameter and a second opening associated with a second diameter, and wherein the first opening and the second opening are connected by a slot.
A method of chemical mechanical polishing (CMP), comprising:
- loading a wafer into a pocket of a polishing head, wherein the polishing head includes a membrane, a support plate, and a retaining ring;
- providing an abrasive slurry between a polishing pad and a front-side of the wafer;
- and
- polishing the wafer by applying pressure from a pressure control to a backside of the wafer through a plurality of apertures on the support plate while the wafer and polishing pad are moved with respect to one another.
1 more element
Dependencies are inferred from the claim text.