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US 2018/0007300 A1Published application
Solid-state imaging device and manufacturing method therefor
AssigneeCanon Kabushiki Kaisha
InventorsMineo Shimotsusa, Fumihiro Inui
Life of this patent
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Abstract
A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.
Claims17
A solid-state imaging device comprising:
- a plurality of pixels, the pixel including
- a photoelectric conversion unit including a first semiconductor region of a first conductivity type,
- a floating diffusion region, and
- a transfer transistor including a transferring gate electrode configured to transfer signal charge generated at the photoelectric conversion unit to the floating diffusion region;
- a signal processing circuit for processing a signal output from the plurality of pixels;
- a first semiconductor substrate;
- and
- a second semiconductor substrate,
- wherein
- the first semiconductor substrate includes a pixel region;
- a plurality of the photoelectric conversion units and a plurality of the floating diffusion regions are arranged in the pixel region;
- a first element isolation portion is provided in the pixel region, configured to electrically isolate at least a part of the plurality of the photoelectric conversion units and at least a part of the plurality of the floating diffusion regions;
- the second semiconductor substrate includes a circuit region;
- a plurality of transistors included in the signal processing circuit are arranged in the circuit region;
- a second element isolation portion is arranged in the circuit region, configured to electrically isolate at least a part of the plurality of transistors;
- and
- the first element isolation portion and the second element isolation portion are of different types from each other.
14 more elements
A solid-state imaging device comprising:
- a plurality of pixels, the pixel including
- a photoelectric conversion unit,
- a floating diffusion region,
- a transferring transistor including a transferring gate electrode configured to transfer signal charge generated at the photoelectric conversion unit to the floating diffusion region,
- an amplifying transistor configured to output a signal based on an amount of electric charge of the floating diffusion region, and
- a resetting transistor configured to reset a voltage of the floating diffusion region;
- a signal processing circuit for processing a signal output from the plurality of pixels;
- a first semiconductor substrate;
- and
- a second semiconductor substrate,
- wherein a first insulating film is provided on a first principal surface of the first semiconductor substrate,
- wherein the first semiconductor substrate includes a pixel region;
- wherein a plurality of photoelectric conversion units and a plurality of floating diffusion regions are arranged in the pixel region;
- wherein the second semiconductor substrate includes a circuit region;
- wherein a plurality of transistors included in the signal processing circuit are arranged in the circuit region;
- wherein an element isolation portion is arranged in the circuit region, configured to electrically isolate at least a part of the plurality of transistors;
- wherein an interface between the pixel region and the first insulating film is flat;
- wherein an interface of a region where the element isolation portion is provided, between the second semiconductor substrate and the second insulating film, is arranged at a first depth with respect to an interface of a region where the transistor included in the signal processing circuit is arranged, between the second semiconductor substrate and the second insulating film;
- and
- wherein the first depth is larger than zero.
17 more elements
A signal processing circuit substrate connectable to a photoelectric conversion substrate,
- wherein
- the photoelectric conversion substrate includes
- a pixel region;
- a plurality of the photoelectric conversion units each including a first semiconductor region of a first conductivity type and arranged in the pixel region;
- a plurality of the floating diffusion regions arranged in the pixel region;
- and
- a first element isolation portion provided in the pixel region, and configured to electrically isolate at least a part of the plurality of the photoelectric conversion units and at least apart of the plurality of the floating diffusion regions, and
- the first element isolation portion includes a second semiconductor region of a second conductivity type which contacts a first insulating film disposed on a first surface of the first semiconductor substrate and a second insulating film disposed on a second surface of the first semiconductor substrate, the second surface being opposite to the first surface,
- the signal processing circuit substrate comprising:
- a signal processing circuit configured to process a signal output from the plurality of photoelectric conversion units;
- a plurality of transistors included in the signal processing circuit;
- and
- a second element isolation portion configured to electrically isolate at least a part of the plurality of transistors and including an insulator portion.
10 more elements
Dependencies are inferred from the claim text.