Semiconductor laser source

A semiconductor laser source able to emit at least one wavelength λLi, said laser source comprising:

• a substrate made of silicon extending mainly in a plane called the “plane of the substrate”;
• a structured layer formed on an upper face of the substrate made of silicon and having an upper face on the opposite side to the substrate made of silicon, said structured layer comprising:
• a passive optical component chosen from the group composed of an optical reflector and a waveguide, said passive optical component being encapsulated in silica or produced on a silica layer;
• and
• at least one pad extending from a lower face, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer, said pad being made entirely from a material the thermal conductivity at 20° C. of which is higher than the thermal conductivity at 20° C. of silica, in order to form a thermal bridge through the structured layer;
• and
• an optical amplifier made of III-V material able, when it is supplied with power, to amplify the optical signal of wavelength λLi that passes through it, said optical amplifier being bonded directly, by direct bonding, to the upper face of the structured layer above, in a direction perpendicular to the plane of the substrate, the passive optical component so that the optical signal amplified by the optical amplifier is reflected or guided by said passive optical component, said optical amplifier also being bonded directly, by direct bonding, at least partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon,
• wherein the pad is produced from silicon nitride.