Semiconductor laser device

A semiconductor laser device comprising:

• a plurality of semiconductor laser units that are capable of being independently driven;
• and
• a spatial light modulator that is optically coupled to a group of the plurality of semiconductor laser units,
• wherein each of the semiconductor laser units includes
• an active layer,
• a pair of clad layers that has the active layer interposed therebetween, and
• a diffractive lattice layer that is optically coupled to the active layer,
• wherein the plurality of semiconductor laser units output laser beams along respective thickness directions,
• wherein the spatial light modulator includes
• a liquid crystal layer,
• a reflection film that is provided on a side opposite to the semiconductor laser unit with respect to the liquid crystal layer,
• a plurality of pixel electrodes that are two-dimensionally disposed, and
• a common electrode that interposes the liquid crystal layer interposed between the common electrode and the pixel electrode,
• wherein a laser beam emitted from each of the semiconductor laser units is incident on the spatial light modulator and is modulated in accordance with a state of the liquid crystal layer based on the pixel electrodes,
• wherein the laser beam reflected by the reflection film of the spatial light modulator and modulated is output to an outside from a light emitting surface of each of the semiconductor laser units again through each of the semiconductor laser units, and
• wherein the semiconductor laser device further comprises
• a ¼ wavelength plate that is disposed between a group of the active layers of the plurality of semiconductor laser units and the reflection film, and
• a polarizing plate that is disposed between the group of the active layers of the plurality of semiconductor laser units and the light emitting surface.