Nano-scale transistor

A nano-scale transistor comprising:

• a source electrode, a drain electrode, a gate electrode, and a nano-heterostructure;
• the nano-heterostructure being electrically coupled with the source electrode and the drain electrode, the gate electrode being insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer;
• and, the nano-heterostructure comprises:
• a first carbon nanotube oriented along a first direction;
• a semiconductor layer with a thickness ranging from 1 nanometer to 200 nanometers, and the semiconductor layer comprising a first surface and a second surface opposite to the first surface;
• a second carbon nanotube oriented along a second direction;
• and
• wherein the first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface, the semiconductor layer is sandwiched between the first carbon nanotube and the second carbon nanotube, and the first carbon nanotube and the second carbon nanotube are crossed with each other.