Method for making nano-heterostructure

A method for making a nano-heterostructure comprising:

• step (S1), providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first carbon nanotubes;
• step (S2), forming a semiconductor layer on the first carbon nanotube layer;
• step (S3), covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second carbon nanotubes;
• step (S4), finding and labeling a first metallic carbon nanotube and a semiconducting carbon nanotube from the first carbon nanotube layer and a second metallic carbon nanotube from the second carbon nanotube layer;
• the first metallic carbon nanotube being parallel to and spaced away from the semiconducting carbon nanotube;
• second metallic carbon nanotube from the second carbon nanotube laye wherein a first extending direction of the second metallic carbon nanotube is crossed with a second extending direction of the first metallic carbon nanotube and a third extending direction of the semiconducting carbon nanotube;
• step (S5), removing the plurality of first carbon nanotubes and the plurality of second carbon nanotubes except for the first metallic carbon nanotube, the semiconducting carbon nanotube, and the second metallic carbon nanotube to form a multilayer structure;
• and
• step (S6), annealing the multilayer structure obtained by above steps.