Method for making nano-heterostructure

A method for making a nano-heterostructure comprising:

• S1:
• providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes;
• S2:
• forming a semiconductor layer on the first carbon nanotube layer;
• S3:
• covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes;
• S4:
• finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer;
• S5:
• removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes except for the first carbon nanotube and the second carbon nanotube to form a multilayer structure;
• and
• S6:
• annealing the multilayer structure.