Methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, the method comprising:

• forming a selection layer and a variable resistance layer on a substrate;
• forming a preliminary first mask on the variable resistance layer, the preliminary first mask extending in a first direction;
• forming an upper mask on the variable resistance layer and the preliminary first mask, the upper mask extending in a second direction crossing the first direction;
• etching the preliminary first mask using the upper mask as an etching mask to form a first mask having a pillar shape;
• and
• anisotropically etching the variable resistance layer and the selection layer using the first mask as an etching mask to form a pattern structure including a variable resistance pattern and selection pattern sequentially stacked, the pattern structure having a pillar shape, wherein forming the pattern structure includes forming a plurality of pattern structures,
• and wherein anisotropically etching the variable resistance layer and the selection layer includes forming a recess at an upper portion of the substrate between the plurality of pattern structures.

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of first conductive patterns on a substrate, each of the first conductive patterns extending in a first direction;
• forming a selection layer and a variable resistance layer on the first conductive patterns;
• forming a capping layer on the variable resistance layer, the capping layer being formed of an insulating material;
• forming a preliminary first mask on the capping layer, the preliminary first mask extending in the first direction;
• forming an upper mask on the variable resistance layer and the preliminary first mask such that the preliminary first mask is between the upper mask and the variable resistance layer, the upper mask extending in a second direction crossing the first direction;
• etching the preliminary first mask using the upper mask as an etching mask to form a first mask having a pillar shape;
• anisotropically etching the capping layer, the variable resistance layer, and the selection layer using the first mask as an etching mask to form a pattern structure including a variable resistance pattern and selection pattern sequentially stacked, the pattern structure having a pillar shape;
• and
• forming a plurality of second conductive patterns on the pattern structure, the first second conductive patterns extending in the second direction.

A method of manufacturing a semiconductor device, the method comprising:

• forming a variable resistance layer on a substrate;
• forming a selection layer on the variable resistance layer;
• forming a capping layer on the selection layer, the capping layer being formed of an insulating material;
• forming a preliminary first mask on the capping layer, the preliminary first mask extending in a first direction, the preliminary first mask includes a material having a high etching selectivity with respect to each of the selection layer and the variable resistance layer;
• forming an upper mask on the selection layer and the preliminary first mask such that the preliminary first mask is between the upper mask and the selection layer, the upper mask extending in a second direction crossing the first direction;
• etching the preliminary first mask using the upper mask as an etching mask to form a first mask having a pillar shape;
• and
• anisotropically etching the capping layer, variable resistance layer, and selection layer using the first mask as an etching mask to form a pattern structure including a selection pattern and a variable resistance pattern sequentially stacked, the pattern structure having a pillar shape.