Memory cell structures
AssigneeMicron Technology, Inc.
InventorScott E. Sills
Life of this patent
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Abstract
The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode.
Claims20
A memory cell, comprising:
- a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode;
- a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode;
- and
- a storage element between the first electrode and the electrode contact portion of the second electrode.
A memory cell, comprising:
- a resistance variable material formed on a blunted peak of a first electrode having non-vertical sidewalls;
- a first dielectric material formed on the resistance variable material and having a valley formed therein;
- and
- a contact portion of a second electrode formed in the valley such that the contact has non-vertical sidewalls defined by the valley.
A memory cell, comprising:
- a resistance variable material formed on a peak of a first electrode having angled sidewalls such that the resistance variable material includes a peak and angled sidewalls;
- a first dielectric material formed on the resistance variable material and having a valley formed therein;
- and
- a contact portion of a second electrode formed in the valley such that the contact portion of the second electrode has angled sidewalls defined by the valley.
Dependencies are inferred from the claim text.