Memory device

A memory device comprising:

• a first conductive layer extending in a first direction;
• a second conductive layer extending in the first direction;
• a third conductive layer intersecting the first conductive layer and the second conductive layer, the third conductive layer extending in a second direction crossing the first direction;
• and
• a resistance change layer including a first region provided between the first conductive layer and the third conductive layer, a second region provided between the second conductive layer and the third conductive layer, and a third region provided between the first region and the second region, the first region having a superlattice structure, the second region having a superlattice structure, the third region including at least one element selected from the group consisting of oxygen (O), fluorine (F), carbon (C), phosphorous (P), boron (B), nitrogen (N), hydrogen (H), bismuth (Bi), cadmium (Cd), zinc (Zn), gallium (Ga), selenium (Se), aluminum (Al), sulfur (S), beryllium (Be), indium (In), and lead (Pb), concentration of the at least one element in the third region being higher than that in the first region and the second region.