Methods for Manufacturing Magnetic Memory Devices
AssigneeSamsung Electronics Co., Ltd.
InventorsDaeeun Jeong, Yoonjong Song
Life of this patent
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Abstract
Disclosed is a method for manufacturing a magnetic memory device. The method for manufacturing a magnetic memory device comprises sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a boron absorption layer on the second magnetic layer, sequentially forming a metal capping layer and an oxygen donor layer on the boron absorption layer, and performing a heat treatment process to diffuse at least a portion of oxygen atoms included in the oxygen donor layer into the metal capping layer and the boron absorption layer. The metal capping layer has a greater oxygen diffusivity than the oxygen donor layer.
Claims20
A method for manufacturing a magnetic memory device, the method comprising:
- sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate;
- forming a boron absorption layer on the second magnetic layer;
- sequentially forming a metal capping layer and an oxygen donor layer on the boron absorption layer, the metal capping layer having a greater oxygen diffusivity than the oxygen donor layer;
- and
- performing a heat treatment process to diffuse at least a portion of oxygen atoms contained in the oxygen donor layer into the metal capping layer and the boron absorption layer.
A method for manufacturing a magnetic memory device, the method comprising:
- sequentially forming an oxygen donor layer and a metal capping layer on a substrate, the metal capping layer including a greater oxygen diffusivity than the oxygen donor layer;
- forming a boron absorption layer on the metal capping layer;
- sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on the boron absorption layer;
- and
- performing a heat treatment process to diffuse at least a portion of oxygen atoms contained in the oxygen donor layer into the metal capping layer and the boron absorption layer and to diffuse at least a portion of boron atoms contained in the first magnetic layer into the boron absorption layer.
A method for manufacturing a magnetic tunnel junction for a magnetic memory device, the method comprising:
- forming an interlayer dielectric layer on a substrate;
- forming at least one contact plug to penetrate the interlayer dielectric layer;
- sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on the interlayer dielectric layer and the at least one contact plug;
- forming a boron absorption layer on the second magnetic layer;
- sequentially forming a metal capping layer and an oxygen donor layer on the boron absorption layer, the metal capping layer having a greater oxygen diffusivity than the oxygen donor layer;
- and
- performing a heat treatment process to diffuse at least a portion of oxygen atoms contained in the oxygen donor layer into the metal capping layer and the boron absorption layer.
Dependencies are inferred from the claim text.