Sensor device and method for manufacturing same
AssigneeAsahi Kasei Microdevices Corporation
InventorMasahiro NAKAMURA
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Abstract
The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. A sensor device has a semiconductor substrate, a first metal wiring layer provided on the semiconductor substrate, a first insulating layer provided on the first metal wiring layer, a compound semiconductor sensor element provided on the first insulating layer, a second metal wiring layer provided on the compound semiconductor sensor element and the first insulating layer, and a second insulating layer provided on the second metal wiring layer. A third insulating layer is provided between the first metal wiring layer and the second metal wiring layer, and the compound semiconductor sensor element is provided in the third insulating layer.
Claims22
A sensor device comprising:
- a semiconductor substrate;
- a first metal wiring layer provided on the semiconductor substrate;
- a first insulating layer provided on the first metal wiring layer;
- a compound semiconductor sensor element provided on the first insulating layer;
- a second metal wiring layer provided on the compound semiconductor sensor element and the first insulating layer;
- and
- a second insulating layer provided on the second metal wiring layer.
A sensor device comprising:
- a semiconductor substrate;
- and
- a first compound semiconductor magnetic sensor provided in an insulating layer between a first metal wiring layer and a second metal wiring layer provided on the semiconductor substrate.
A method for manufacturing a sensor device comprising:
- a step of forming a first metal wiring layer on a semiconductor substrate;
- a step of forming a first insulating layer on the first metal wiring layer;
- a step of forming a compound semiconductor sensor element on the first insulating layer;
- a step of stacking a third insulating layer after forming the compound semiconductor sensor element;
- and
- a step of forming a second metal wiring layer on the third insulating layer.
Dependencies are inferred from the claim text.