Memory device
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsJea Gun PARK, Du Yeong LEE, Song Hwa HONG, Jin Young CHOI, Seung Eun LEE, Junli LI
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Abstract
The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic exchange diamagnetic layer, and upper electrode formed on the substrate.
Claims20
A memory device, comprising a substrate and a lower electrode, buffer layer, seed layer, synthetic exchange diamagnetic layer, capping layer, Magnetic Tunnel Junction (MTJ), and upper electrode formed on the substrate.
A memory device, comprising a substrate and a lower electrode, seed layer, and MTJ laminated on the substrate,
- wherein the seed layer is formed in at least a dual structure, and at least one layer of the dual structure has a bcc structure.
A memory device, comprising an MTJ that comprises a free layer, a tunnel barrier, and a pinned layer,
- wherein the free layer is formed in at least a two-layer structure having different magnetization directions.
Dependencies are inferred from the claim text.