Optoelectronic Semiconductor Component and Method for Producing Same

A method for producing a plurality of optoelectronic semiconductor components the method comprising:

• applying a plurality of semiconductor chips, which emit electromagnetic radiation of a first wavelength range from a radiation exit surface during operation, onto an auxiliary carrier;
• applying a first conversion material into interstices between the semiconductor chips, wherein the first conversion material is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range;
• applying a second conversion material over the first conversion material, wherein the second conversion material is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range or of a third wavelength range;
• removing the auxiliary carrier;
• and
• singulating the semiconductor components, wherein the first conversion material forms a first conversion layer on lateral flanks of the semiconductor chips and the second conversion material forms a second conversion layer on the radiation exit surface of the semiconductor chips,
• wherein the first conversion material and the second conversion material are a first liquid resin and a second liquid resin into which phosphor particles have been introduced, and
• wherein the phosphor particles from the second resin sediment into the first resin, and
• wherein the first and second resins are cured before a singulation process.

A semiconductor component comprising:

• a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface;
• a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range;
• and
• a second conversion layer located on a radiation exit surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range, wherein the first conversion layer differs from the second conversion layer,
• wherein the first conversion layer is a resin comprising phosphor particles, and
• wherein a concentration of the phosphor particles exhibits a gradient along the lateral flank of the semiconductor chip.

A semiconductor component comprising:

• a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface;
• a first conversion layer on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range;
• and
• a second conversion layer on the radiation exit surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range, wherein the first conversion layer differs from the second conversion layer,
• wherein the first conversion layer comprises a resin having phosphor particles, wherein a concentration of the phosphor particles exhibits a gradient along the lateral flank of the semiconductor chip,
• wherein on the lateral flank of the semiconductor chip a reflective layer is arranged, and
• wherein the reflective layer borders the main surface of the semiconductor chip opposite to the radiation exit surface.