Vertical Light-Emitting Diode Device and Method of Fabricating the Same
AssigneeKorea University Research and Business Foundation
InventorsTae Yeon SEONG, Ki Seok KIM, Sung-joo SONG
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Abstract
A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.
Claims14
A vertical light-emitting diode device, comprising:
- a conductive substrate serving as a p electrode;
- a p-type GaN layer provided on the conductive substrate;
- an active layer provided on the p-type GaN layer;
- an n-type GaN layer provided on the active layer;
- an n electrode pattern provided on the n-type GaN layer;
- a metal oxide structure filling a plurality of holes formed in the n-type GaN layer;
- and
- a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.
A method of fabricating a vertical light-emitting diode device, comprising:
- sequentially growing a buffer layer, an n-type GaN layer, an active layer, and a p-type GaN layer on a single-crystalline growth substrate;
- sequentially forming a metal reflection layer and a conductive substrate on the p-type GaN layer;
- performing a laser lift-off process to separate the single-crystalline growth substrate and remove the buffer layer;
- patterning the n-type GaN layer to form holes;
- forming a sidewall on an inner side surface of each of the holes;
- forming a seed layer on bottom surfaces of the holes;
- crystal-growing a metal oxide structure on the seed layer;
- and
- forming an n electrode pattern on the n-type GaN layer.
Dependencies are inferred from the claim text.