Light-emitting element and method for producing light-emitting element

A method for producing a nitride-based semiconductor light-emitting element, comprising:

• a first semiconductor layer forming step of forming a first semiconductor layer of a first conductivity type on a semiconductor substrate;
• a light-emitting layer region forming step of forming a light-emitting layer region including a light-emitting layer on said first semiconductor layer;
• a carrier blocking layer forming step of forming a carrier blocking layer on said light-emitting layer region;
• and
• a second semiconductor layer forming step of forming a second semiconductor layer of a second conductivity type different from said first conductivity type on said carrier blocking layer,
• wherein said carrier blocking layer forming step includes an impurity introducing step of forming a predetermined specific region in said carrier blocking layer, said predetermined specific region extending from an interface between said carrier blocking layer and said light-emitting layer region
• and wherein a maximum value of a concentration of an impurity of said second conductivity type in said predetermined specific region is higher than 5×1019 cm−3.