Epitaxial structure with tunnel junction, p-side up processing intermediate structure and method of manufacturing the same

Abstract

An epitaxial structure with a tunnel junction, a p-side up processing intermediate structure and a manufacturing method thereof are provided. The epitaxial structure includes: a substrate, a first n-type semiconductor layer, a tunnel junction layer, a p-type semiconductor layer, a multiple quantum well layer and a second n-type semiconductor layer, wherein the first n-type and p-type semiconductor layers and the tunnel junction layer together form a p-type semiconductor structure. The manufacturing method of the p-side up processing intermediate structure includes disposing a permanent substrate on the second n-type semiconductor layer to form a laminated structure, flipping the laminated structure upside down and removing the substrate of the epitaxial structure, thereby resulting in the p-type semiconductor structure being disposed facing up.

Dependencies are inferred from the claim text.