Lateral Light Emitting Diode Device and Method For Fabricating the Same

A method for fabricating a lateral light emitting diode device, the method comprising:

• sequentially stacking an n-type GaN layer, an activation layer, a p-type GaN layer, and a current spreading layer on a substrate;
• patterning the current spreading layer and the p-type GaN layer to form a plurality of holes;
• removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer by using a patterning process to expose the n-type GaN layer;
• forming a seed layer on bottom surfaces of the plurality of the holes;
• growing metal oxide structures on the seed layer in a crystal state;
• and
• forming an n-electrode on the exposed n-type GaN layer and a p-electrode on the current spreading layer.

A method for fabricating a lateral light emitting diode device, the method comprising:

• sequentially stacking an n-type GaN layer, an activation layer, and a p-type GaN layer on a substrate;
• patterning the p-type GaN layer to form a plurality of holes;
• forming a seed layer on bottom surfaces of the plurality of holes;
• growing metal oxide structures on the seed layer in a crystal state;
• forming a current spreading layer on the substrate where the metal oxide structures are formed;
• removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer to locally expose the n-type GaN layer;
• and
• forming an n-electrode on the exposed n-type GaN layer and a p-electrode on the p-type GaN layer.