Optoelectronic semiconductor device with barrier layer
AssigneeEpistar Corporation
InventorsTsung-Hsien LIU, Rong-Ren LEE, Shih-Chang LEE
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Abstract
An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.
Claims20
An optoelectronic semiconductor device, comprising:
- a first semiconductor layer, comprising a first dopant and a second dopant;
- a second semiconductor layer, comprising a third dopant;
- and
- a barrier layer between the first semiconductor layer and the second semiconductor layer;
- wherein, the material of the second dopant is the same as that of the third dopant, and in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and wherein the barrier layer comprises a group III element, and a percentage of the group III element decreases in the barrier layer from the portion near the second semiconductor layer to the portion near the first semiconductor layer.
Dependencies are inferred from the claim text.