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US 2018/0006181 A1Published application
Radiation Sensor, Method of Forming the Sensor and Device Including the Sensor
AssigneeInternational Business Machines Corporation
InventorsKangguo CHENG, Xin Miao, Wenyu Xu, Chen Zhang
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Abstract
A semiconductor device includes a semiconductor structure formed on a substrate, a gate formed on a first side of the semiconductor structure, and a charge collector layer formed on a second side of the semiconductor structure.
Claims20
A semiconductor device, comprising:
- a semiconductor structure formed on a substrate;
- a gate formed on a first side of the semiconductor structure;
- and
- a charge collector layer formed on a second side of the semiconductor structure.
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A method of forming a semiconductor device, the method comprising:
- forming a semiconductor structure on a substrate;
- forming a gate on a first side of the semiconductor structure;
- and
- forming a charge collector layer on a second side of the semiconductor structure.
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A method of forming a semiconductor device, the method comprising:
- forming a first transistor including a first fin structure on a first region of a substrate;
- forming a second transistor including a second fin structure on a second region of a substrate;
- and
- replacing a gate on an outer side of the first fin structure with a charge collector layer.
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Dependencies are inferred from the claim text.