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US 2018/0006175 A1Published application
Semiconductor bulk structure and optical device
AssigneeFujitsu Limited
InventorMari Ohfuchi
Life of this patent
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Abstract
A semiconductor bulk structure includes a bulk structure including a portion where two layers of GeSe and one layer of WS2 are alternately laminated. And an optical device includes a semiconductor bulk structure having a bulk structure including a portion where two layers of GeSe and one layer of WS2 are alternately laminated.
Claims10
A semiconductor bulk structure comprising:
- a bulk structure including a portion where two layers of GeSe and one layer of WS2 are alternately laminated.
An optical device comprising:
- a semiconductor bulk structure having a bulk structure including a portion where two layers of GeSe and one layer of WS2are alternately laminated.
Dependencies are inferred from the claim text.